The silicon carbide substrate preparation process mainly includes raw material synthesis, silicon carbide crystal growth, ingot processing, ingot cutting, cutting piece grinding, grinding piece polishing, polishing piece cleaning, etc.Among them, the key and difficult points of preparation are mainly the crystal growth, cutting, grinding and polishing links, which are the key points and difficulties in the entire substrate production process, and become the bottleneck that limits the yield rate and production capacity of silicon carbide.
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Tel: +86 17700605088
